1.- Semiclassical Monte Carlo simulation of a transistor
File |
Explanation |
Transistor.txt |
This file can be used fort a simple simualion of a four gates nanotransitor |
2.- Qauntum Monte Carlo simulation of a Resonant Tunneling Device (RTD)
File |
Explanation |
RTD.txt |
This file can be used for a simple simulation of a RTD |
3.- Transistent many-body simulation of RTDs
F.L.Traversa, E.Buccafurri, A.Alarcón,G.Albareda, R.Clerc, F.Calmon, A.Poncet, X.Oriols “Time-Dependent Many-Particle Simulation for Resonant Tunneling Diodes: Interpretation of an Analytical Small-Signal Equivalent Circuit” IEEE Transaction on Electron Devices, 58, 2104 - 2112 (2011)
File |
Explanation |
fitxer1.txt |
This file reproduces figure 7 |
4.- Overall charge neutrality in nanoelectronic devices
G. Albareda, H. López, X. Cartoixà, J. Suñé, and X. Oriols "Time-dependent boundary conditions with lead-sample Coulomb correlations: Application to classical and quantum nanoscale electron device simulators" Phys. Rev. B 82, 085301 (2010)
File |
Explanation |
fitxer1.txt |
This file reproduces figure 7 |
File |
Explanation |
fitxer1.txt |
This file reproduces figure8 |
5.- Transport beyond mean-field
G.Albareda, J.Suñé and X.Oriols "Many-particle Hamiltonian for open systems with full Coulomb interaction: Application to classical and quantum time-dependent simulations of nanoscale electron devices” Physical Review B,79, 075315 (2009).
File |
Explanation |
fitxer1.txt |
This file reproduces figure 7 |
File |
Explanation |
fitxer1.txt |
This file reproduces figure8 |
6.- High-frequency: Ramo-Shockley-Pellegrini theorems
A. Alarcón and '''X.Oriols''' “Computation of quantum electron transport with local current conservation using quantum trajectories,” Journal of Statistical Mechanics: Theory and Experiment 2009, P01051 (2009)
File |
Explanation |
fitxer1.txt |
This file reproduces figure9 |
Bohm trajectorias and correlations
X. Oriols, "Quantum-trajectory approach to time-dependent transport in mesoscopic systems with electron-electron interactions" Phys. Rev. Lett., vol.98, 066803 (2007).
Electron injection model
»X.Oriols, E.Fernàndez-Díaz, A.Alvarez and A.Alarcón “An Electron injection model for time-dependent simulators of nanoscale devices with electron confinement: Application to the comparison of the intrinsic noise of 3D-, 2D- and 1D- ballistic transistors” Solid State Electronics, vol. 51, 306 (2007) Special Issue on EUROSOI
Bohm trajectorias and current noise
X. Oriols, A.Trois and G.Blouin "Self-consistent simulation of quantum shot noise in nanoscale electron devices" Appl. Phys. Lett. vol. 85(16), 3596 (2004).
X.Oriols, F. Martín and J. Suñé, "High frequency components of current fluctuations in semiconductor tunneling barriers" Appl. Phys. Lett. vol. 80(21), 4048 (2002).
High frequency
X. Oriols, F.Boano and A. Alarcón "Self-consistent coupling between driven electron tunneling and electromagnetic propagation at terahertz frequencies" Appl. Phys. Lett. 92, 222107 (2008).
X.Oriols, A.Alarcon and E. Fernandez-Diaz "Time-dependent quantum current for independent electrons driven under nonperiodic conditions” Physical Review B, 71, 245322 (2005).
Spin
H. López, X. Oriols, J. Suñé, and X. Cartoixà " Spin-dependent injection model for Monte Carlo device simulation" Journal of Appl. Phys. 104(7), 073702 (2008).